Pyridylarsine-based Cu(I) complexes showing TADF mixed with fast phosphorescence: a speeding-up emission rate using arsine ligands.

Can arsine ligands be preferred over similar phosphines to design Cu(I)-based TADF materials? The present study reveals that arsines can indeed be superior to reach shorter decay times of Cu(I) emitters. This has been exemplified on a series of bis(2-pyridyl)phenylarsine-based complexes [Cu 2 (Py 2 AsPh) 2 X 2 ] (X = Cl, Br, and I), the emission decay times of which are significantly shorter (2-9 μs at 300 K) than those of their phosphine analogs [Cu 2 (Py 2 PPh) 2 X 2 ] (5-33 μs). This effect is caused by two factors: (i) large Δ E (S 1 -T 1 ) gaps of the arsine complexes (1100-1345 cm -1 ), thereby phosphorescence is admixed with TADF at 300 K, thus reducing the total emission decay time compared to the TADF-only process by 5-28%; (ii) higher SOC strength of arsenic ( ζ l = 1202 cm -1 ) against phosphorus ( ζ l = 230 cm -1 ) makes the k r (T 1 → S 0 ) rate of the Cu(I)-arsine complexes by 1.3 to 4.2 times faster than that of their phosphine analogs. It is also noteworthy that the TADF/phosphorescence ratio for [Cu 2 (Py 2 AsPh) 2 X 2 ] at 300 K is halogen-regulated and varies in the order: Cl (1 : 1) < Br (3 : 1) ≈ I (3.5 : 1). These findings provide a new insight into the future design of dual-mode (TADF + phosphorescence) emissive materials with reduced lifetimes.