Ultrabroadband Imaging Based on Wafer-Scale Tellurene.

High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it has been established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of digital image sensors for ultrabroadband imaging has been severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the intrinsic surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted high-efficiency exciton separation, in-situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 10 7 A/W, 8.2 × 10 9 % and 4.5 × 10 15 Jones. An ultrabroadband image sensor is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of advanced 2D imaging platform toward the next-generation intelligent equipment. This article is protected by copyright. All rights reserved.