Germanium and Tin Precursors for Chalcogenide Materials Containing N -Alkoxy Thioamide Ligands.

This study describes the synthesis of germanium and tin complexes Ge(mdpaS) 2 ( 1 ), Ge(edpaS) 2 ( 2 ), Ge(bdpaS) 2 ( 3 ), Ge(empaS) 2 ( 4 ), Sn(mdpaS) 2 ( 5 ), Sn(edpaS) 2 ( 6 ), Sn(bdpaS) 2 ( 7 ), and Sn(empaS) 2 ( 8 ) (mdpaSH = ( Z )- N -methoxy-2,2-dimethylpropanimidothioic acid; edpaSH = ( Z )- N -ethoxy-2,2-dimethylpropanimidothioic acid; bdpaSH = ( Z )- N -(tert-butoxy)-2,2-dimethylpropanimidothioic acid; empaSH = ( Z )- N -ethoxy-2-methylpropanimidothioic acid), using newly designed N -alkoxy thioamide ligands as precursors for metal chalcogenide materials. All complexes were characterized using various analytical techniques, and the single-crystal structures of complexes 5 and 7 revealed a distorted seesaw geometry in the monomeric SnL 2 form. Thermogravimetric (TG) curves showed differences between Ge compounds, which exhibited single-step weight losses, and Sn compounds, which exhibited multistep weight losses. As a result, we suggest that the synthesized complexes 1 - 8 are potential precursors for group IV metal chalcogenide materials.