Evidence for electron-hole crystals in a Mott insulator.
Zhizhan QiuYixuan HanKeian NooriZhaolong ChenMikhail KashchenkoLi LinThomas OlsenJing LiHanyan FangPin LyuMykola TelychkoXingyu GuShaffique AdamSu Ying QuekAleksandr RodinA H Castro NetoKonstantin S NovoselovJiong LuPublished in: Nature materials (2024)
The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, α-RuCl 3 , through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.