Re/Ir@Os-doping induced insulator-to-metal transition in Mott-insulator Ca 2 FeOsO 6 : octahedral distortion effects.
S NazirPublished in: Physical chemistry chemical physics : PCCP (2024)
Regardless of several investigations to elucidate the ground state of the strongly correlated electron systems in doped Mott-insulators (MIs), the origin of the doping-induced insulator-to-metal transition (IMT) remains a crucial and debatable subject in solid-state physics. Herein, we explore the consequences of Re/Ir-doping at the Os-site (Re/Ir@Os), on the physical properties of the MI ferrimagnetic (FiM) Ca 2 FeOsO 6 double perovskite oxides using density functional theory calculations. The doped structures' solidity is analyzed by computing the defect formation energies in terms of the dopant-rich situation, which confirms their growth credibility at ambient conditions along with mechanical and dynamical stabilities. Various FiM spin-ordering is taken into account in the doped structures to analyze the magnetic ground state, which is FiM-I/FiM-II in the Re/Ir@Os-doped system. Remarkably, an IMT is predicted in the Re/Ir@Os-doped structures, which is due to the admixture of the partially occupied 5d orbitals of these ions. The calculated partial spin magnetic moments ( m s ) of +4.12, -1.58, -0.75 and +0.88 μ B on the Fe, Os, Re, and Ir ions, endorse the +3, +5, +5, and +4 states having electronic configurations of t32g↑t02g↓e2g↑e0g↓, t32g↑t02g↓e0g↑e0g↓, t22g↑t02g↓e0g↑e0g↓, t32g↑t22g↓e0g↑e0g↓, respectively. The "+" and "-" signs on the ions m s values, lead the systems into various FiM magnetic ordering. Moreover, the estimated Curie temperature ( T C ) using the Heisenberg model in the pristine structure is 334 K, which is close to the experimentally observed value of 320 K along with a colossal uniaxial magneto crystalline anisotropy energy constant ( K ) of 2.95 × 10 7 erg cm -3 having the easy magnetic axis of the ac -plane ([101]). It is established that T C / K reduces and enhances to 298 K/1.33 × 10 7 erg cm -3 and 365 K/4.71 × 10 7 erg cm -3 for the Re@Os and Ir@Os-doped motif due to an increase and decrease in the octahedral distortions compared to that of the pristine system, respectively.