First demonstration of Sn diffusion into gallium oxide from poly-tetraallyl tin deposited by initiated chemical vapor deposition by thermal treatment.

Gallium oxide (Ga2O3) is attracting attention as a next-generation semiconductor material for power device because it has a
wide energy band gap and high breakdown electric field. We deposited a Sn polymer, poly-tetraallyl tin (pTASn), on Ga2O3
samples using a disclosed chemical vapor deposition (iCVD) process. The Sn dopant of the Sn polymer layer is injected into
the Ga2O3 through a heat treatment process. Diffusion model of Sn into the Ga2O3 is proposed through secondary ion mass
spectroscopy (SIMS) analysis and bond dissociation energy. The fabricated device exhibited typical n-type FET behavior.
Ga2O3 Sn-doping technology using iCVD will be applied to 3D structures and trench structures in the future, opening up many
possibilities in the Ga2O3-based power semiconductor device manufacturing process.