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Strain-Sensor-In-Pixel Technology for Resolution-Sustainable Stretchable Displays.

Won Kyung MinJong Bin AnByung Ha KangHyunji SonGwan In KimSeok Gyu HongDong Hyun ChoiJusung ChungMoon Ho LeeBeom Soo KimHyun Jae Kim
Published in: ACS nano (2024)
One of the limitations of stretchable displays is the severe degradation of resolution or the decrease in the number of pixels per unit area when stretched. Hence, we suggest a strain-sensor-in-pixel (S-SIP) system through the adoption of hidden pixels that are activated only during the stretch mode for maintaining the density of on-state pixels. For the S-SIP system, the gate and source electrodes of InGaZnO thin-film transistors (TFTs) in an existing pixel are connected to a resistive strain sensor through the facile and selective deposition of silver nanowires (AgNWs) via electrohydrodynamic-jet-printing. With this approach, the strain sensor integrated TFT functions as a strain-triggered switch, which responds only to stretching along the designated axes by finely tuning the orientation and cycles of AgNW printing. The strain sensor-integrated TFT remains in an off-state when unstretched and switches to an on-state when stretched, exhibiting a large negative gauge factor of -1.1 × 10 10 and a superior mechanical stability enduring 6000 cycles, which enables the efficient structure to operate hidden pixels without requiring additional signal processing. Furthermore, the stable operation of the S-SIP in a 5 × 5-pixel array is demonstrated via circuit simulation, implying the outstanding applicability and process compatibility to the conventional active-matrix display backplanes.
Keyphrases
  • high frequency
  • ultrasound guided