Contribution of boundary non-stoichiometry to the lower-temperature plasticity in high-pressure sintered boron carbide.

The improvement of non-oxide ceramic plasticity while maintaining the high-temperature strength is a great challenge through the classical strategy, which generally includes decreasing grain size to several nanometers or adding ductile binder phase. Here, we report that the plasticity of fully dense boron carbide (B 4 C) is greatly enhanced due to the boundary non-stoichiometry induced by high-pressure sintering technology. The effect decreases the plastic deformation temperature of B 4 C by 200 °C compared to that of conventionally-sintered specimens. Promoted grain boundary diffusion is found to enhance grain boundary sliding, which dominate the lower-temperature plasticity. In addition, the as-produced specimen maintains extraordinary strength before the occurrence of plasticity. The study provides an efficient strategy by boundary chemical change to facilitate the plasticity of ceramic materials.