Interfacial Electronic Structures of Photodetectors Based on C8BTBT/Perovskite.
Lin LiSichao TongYuan ZhaoCan WangShitan WangLu LyuYingbao HuangHan HuangJun-Liang YangDongmei NiuXiaoliang LiuYongli GaoPublished in: ACS applied materials & interfaces (2018)
Comprehensive measurements of ultraviolet photoemission spectroscopy, X-ray photoemission spectroscopy, X-ray diffraction, and atomic force microscopy are adopted to investigate the corelevance of energy level alignment, molecular orientation, and film growth of Au/C8BTBT/perovskite interfaces. A small energy offset of valence band maximum of 0.06 eV between perovskite and C8BTBT makes hole transportation feasible. About 0.65 eV upward shift of energy levels is observed with the deposition of the Au film on C8BTBT, which enhances hole transportation to the Au electrode. The observations from the interface analysis are supported by a prototype photodetector of Au (80 nm)/C8BTBT (20 nm)/perovskite (100 nm) that exhibits excellent performances whose responsivity can reach up to 2.65 A W-1, 4 times higher than the best CH3NH3PbI3 photodetectors.
Keyphrases
- room temperature
- high resolution
- perovskite solar cells
- reduced graphene oxide
- sensitive detection
- solar cells
- atomic force microscopy
- single molecule
- ionic liquid
- photodynamic therapy
- high speed
- high efficiency
- gold nanoparticles
- solid state
- light emitting
- visible light
- electron microscopy
- quantum dots
- dual energy
- computed tomography
- molecular dynamics simulations
- mass spectrometry