Electric-Field-Induced Room-Temperature Antiferroelectric-Ferroelectric Phase Transition in van der Waals Layered GeSe.
Zhao GuanYifeng ZhaoXiaoting WangNi ZhongXing DengYunzhe ZhengJinjin WangDongdong XuRuru MaFangyu YueYan ChengRong HuangPing-Hua XiangZhong-Ming WeiJunhao ChuChungang DuanPublished in: ACS nano (2022)
Searching van der Waals ferroic materials that can work under ambient conditions is of critical importance for developing ferroic devices at the two-dimensional limit. Here we report the experimental discovery of electric-field-induced reversible antiferroelectric (AFE) to ferroelectric (FE) transition at room temperature in van der Waals layered α-GeSe, employing Raman spectroscopy, transmission electron microscopy, second-harmonic generation, and piezoelectric force microscopy consolidated by first-principles calculations. An orientation-dependent AFE-FE transition provides strong evidence that the in-plane (IP) polarization vector aligns along the armchair rather than zigzag direction in α-GeSe. In addition, temperature-dependent Raman spectra showed that the IP polarization could sustain up to higher than 700 K. Our findings suggest that α-GeSe, which is also a potential ferrovalley material, could be a robust building block for creating artificial 2D multiferroics at room temperature.
Keyphrases
- room temperature
- raman spectroscopy
- ionic liquid
- high glucose
- electron microscopy
- diabetic rats
- single molecule
- density functional theory
- air pollution
- small molecule
- particulate matter
- high resolution
- highly efficient
- reduced graphene oxide
- molecular dynamics
- gold nanoparticles
- label free
- metal organic framework
- transition metal
- single cell