Controllable Oxidation of ZrS 2 to Prepare High-κ, Single-crystal m-ZrO 2 for Two-dimensional Electronics.

High-κ materials that exhibit large permittivity and band gap are needed as gate dielectrics to enhance capacitance and prevent leakage current in downsized technology nodes. Among these, m-ZrO 2 shows good potential because of its inertness and high-κ with respect to SiO 2 , but a method to produce ultrathin single crystal is lacking. Here, w e achieve the controllable preparation of ultrathin m-ZrO 2 single crystals via the in-situ thermal oxidation of ZrS 2 . As-grown m-ZrO 2 presents an equivalent oxide thickness of ∼0.29 nm, a high dielectric constant of ∼19 and breakdown voltage of ∼7.22 MV cm -1 . MoS 2 field effect transistor (FET) by using m-ZrO 2 as dielectric layer show a comparable mobility to that using SiO 2 dielectric. The ultraclean interface of m-ZrO 2 /MoS 2 and high crystalline quality of m-ZrO 2 leads to negligible hysteresis in transfer curves. Single crystal m-ZrO 2 dielectric shows potential application in digital complementary metal oxide semiconductor logic FET. This article is protected by copyright. All rights reserved.