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A 2d Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing.

Jiajia ZhaYunpeng XiaShuhui ShiHaoxin HuangSiyuan LiChen QianHuide WangPeng YangZhuomin ZhangYou MengWei WangZhengbao YangHongyu YuJohnny C HoZhongrui WangChaoliang Tan
Published in: Advanced materials (Deerfield Beach, Fla.) (2023)
The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium has been widely used in advanced electronics/optoelectronics. However, its application in floating gate memory devices for information processing has never been explored. Herein, we report an electronic/optoelectronic floating gate memory device enabled by tellurium-based 2D vdW heterostructure for multimodal reservoir computing. When subjected to intense electrical/optical stimuli, our device exhibits impressive nonvolatile electronic memory behaviors including ∼10 8 extinction ratio, ∼100-ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multi-bit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, we demonstrate a multimodal reservoir computing system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition. This article is protected by copyright. All rights reserved.
Keyphrases
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