Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications.
Pattunnarajam ParamasivamNaveenbalaji GowthamanViranjay M Srivastava
Published in: Recent patents on nanotechnology (2023)
This proposed patent design, with a reduction in the leakage current characteristics, is mainly suitable for advanced Silicon-based solid-state CMOS devices, Microelectronics, Nanotechnologies, and future-generation device applications.