The in-plane metal contacted 5.1 nm Janus WSSe Schottky barrier field-effect transistors.

Edge contact between two-dimensional materials and metal can achieve small contact resistance because of strong interaction. In this work, we investigated the electronic transport of in-plane (IP) heterojunctions based on Ti/WSSe and Sn/WSSe using first principle calculations. The results showed that the interface bonding and metallization are found on the IP Ti/WSSe and Sn/WSSe contact interface, indicating that the Ohmic contacts are formed between Ti, Sn and WSSe. Then, we constructed double-gate model to investigate the performance of the IP Ti and Sn contacted 5.1 nm WSSe Schottky barrier field-effect transistors (SBFETs). The calculated on-state current of the IP Ti contacted 5.1 nm WSSe SBFETs is 406.3 μA/μm. While, the on-state current of the Sn contacted 5.1 nm WSSe SBFETs reachs up to 1104.2 μA/μm, which is far beyond the requirements of the requirements of International Technology Roadmap for Semiconductor (ITRS) HP application targets. Our study will provide a guide for high performance transistors based on IP metal/WSSe configurations in the future.