Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al 2 O 3 /IZO Multilayer.

In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al 2 O 3 -based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al 2 O 3 /IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400-900 nm. In addition, the Al 2 O 3 /IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure-Al 2 O 3 /IZO transparent memory. The fabricated Al 2 O 3 /IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al 2 O 3 /IZO multilayer transparent memory has a low operating voltage within ±1.5 V. In addition, a flexible Al 2 O 3 /IZO multilayer transparent memory is fabricated using the same process on ITO-coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.