Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance.
Jiacheng ShiSevdenur ArpaciVictor Lopez-DominguezVinod K SangwanFarzad MahfouziJinwoong KimJordan G AthasMohammad HamdiCan AygenHanu AravaCharudatta PhatakMario CarpentieriJidong S JiangMatthew A GraysonNicholas KioussisGiovanni FinocchioMark C HersamPedram Khalili AmiriPublished in: Advanced materials (Deerfield Beach, Fla.) (2024)
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.
Keyphrases
- room temperature
- atomic force microscopy
- single molecule
- high speed
- ionic liquid
- high resolution
- anterior cruciate ligament reconstruction
- working memory
- density functional theory
- molecular dynamics
- healthcare
- risk assessment
- molecularly imprinted
- gold nanoparticles
- social media
- human health
- health information
- solid state
- solid phase extraction
- liquid chromatography