Chemisorption Competition between H 2 O and H 2 for Sites on the Si Surface under Xe + Ion Bombardment: An XPS Study.

This paper reports the competition of H 2 O (residual) and H 2 by site (defects) on the Si surface, created by Xe + ion bombardment. X-ray photoelectron spectroscopy (XPS) in an ultrahigh vacuum system attached to the sample preparation chamber provided the data for the analyses. As hydrogen cannot be detected by XPS, an indirect method to evaluate the O and H cover ratio was developed. The hydrogen passivation effect obtained by the formation of the Si-H bond due to H 2 chemisorption limits Si-OH and Si-O-Si bonds, which are products of H 2 O dissociation. In addition, the results have shown that Xe + ion bombardment diminished the H 2 chemisorption energy barrier onto Si.