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Programmable quantum emitter formation in silicon.

Kaushalya JhuriaV IvanovD PolleyY ZhiyenbayevWei LiuA PersaudW RedjemW QaronyP ParajuliQ JiA J GonsalvesJeffrey BokorLiang Z TanBoubacar KantéThomas Schenkel
Published in: Nature communications (2024)
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N 2 /H 2 ) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and C i centers while passivating the more common G-centers. The C i center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the C i center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.
Keyphrases
  • molecular dynamics
  • density functional theory
  • light emitting
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  • monte carlo
  • high resolution
  • high speed
  • solar cells
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  • carbon dioxide