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Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes.

Robert BernatTihomir KneževićVladimir RadulovićLuka SnojTakahiro MakinoTakeshi OhshimaIvana Capan
Published in: Materials (Basel, Switzerland) (2023)
We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation response to ionizing particles. Two different diode areas were compared: 1 mm × 1 mm and 5 mm × 5 mm. 6 LiF and 10 B 4 C films, which were placed on top of the diodes, were used as thermal neutron converters. We achieved a thermal neutron efficiency of 5.02% with a 6 LiF thermal neutron converter, which is one of the highest efficiencies reported to date. In addition, a temperature-dependent radiation response to alpha particles was presented. Neutron irradiations were performed in a JSI TRIGA dry chamber and an Am-241 wide-area alpha source was used for testing the alpha response of the 4H-SiC Schottky barrier diodes.
Keyphrases
  • light emitting
  • radiation induced
  • low dose