Tunable Valley and Spin Splittings in VSi 2 N 4 Bilayers.

The control and manipulation of the valley and spin degrees of freedom have received great interest in fundamental studies and advanced information technologies. Compared with magnetic means, it is highly desirable to realize more energy-efficient electric control of valley and spin. Using the first-principles calculations, we demonstrate tunable valley and spin degeneracy splittings in VSi 2 N 4 bilayers, with the aid of the layered structure and associated electric control. Depending on different interlayer magnetic couplings and stacking orders, the VSi 2 N 4 bilayers exhibit a variety of combinations of valley and spin degeneracies. Under the action of a vertical electric field, the degeneracy splittings become highly tunable for both the sign and the magnitude. As a result, a series of anomalous Hall currents can be selectively realized with varied indices of valley and spin. These intriguing features offer a practical way for designing energy-efficient devices based on the couplings between multiple electronic degrees of freedom.