Vapor Deposition of Bilayer 3R MoS 2 with Room-Temperature Ferroelectricity.

Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, two-dimensional van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and TMDs. However, sliding ferroelectricity has not well been studied in non-twisted homo-bilayer TMD grown directly by CVD. In this paper, for the first time, we reported experimental observation of a room-temperature out-of-plane ferroelectric switch in semiconducting bilayer 3R MoS 2 synthesized by reverse-flow CVD. PFM hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS 2 /Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping might serve in coordination to determine switchable diode effect.The room-temperature ferroelectricity of CVD-grown MoS 2 will proceed with the potential wafer-scale integration of 2D TMDs in the logic circuit. This article is protected by copyright. All rights reserved.