Gate Dielectrics Integration for Two-Dimensional Electronics: Challenges, Advances and Outlook.

Two-dimensional (2D) semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development towards practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, we will briefly analyze the root causes of such issues, summarize recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics. Then, in the perspective, we will outline the requirements of ideal dielectrics for state-of-the-art 2D devices, and provide an outlook for their future development. This article is protected by copyright. All rights reserved.