Nano-Scale Ga 2 O 3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors.

Thin-film transistor (TFT) is a essential device for future electronics driving the next level of digital transformation. The development of metal-oxide-semiconductor (MOS) TFTs is considered one of the most advantageous devices for next-generation, large-area flexible electronics. This study demonstrates the systematic study of the amorphous gallium oxide (a-Ga 2 O 3 ) and its application to nanocrystalline ZnO TFTs. The TFT with a-Ga 2 O 3 /c-ZnO-stack channel exhibits a field-effect mobility of ∼41 cm 2 V -1 s -1 and excellent stability under positive-bias-temperature stress. The a-Ga 2 O 3 /c-ZnO-stack TFT on polyimide (PI) substrate exhibits a negligible threshold voltage shift upon 100k bending cycles with a radius of 3 mm and is very stable under environmental test. The smooth morphology with tiny grains of ∼12 nm diameter with fewer grain boundary states improves the charge transport in Ga 2 O 3 /ZnO-stack TFT. The existence of amorphous a-Ga 2 O 3 in between very thin ZnO layers helps to enhance the heterointerfaces and reduce the defect density in Ga 2 O 3 /ZnO interface. Therefore, integrating a-Ga 2 O 3 in the ZnO channel in stacked TFT can increase mobility and enhance stability for next-generation flexible TFT electronics.