Probing Optical Multi-Level Memory Effects in Single Core-Shell Quantum Dots And Application Through 2d-0d Hybrid Inverters.

Challenges in the development of a multi-level memory device for multinary arithmetic computers have posed an obstacle to low-power, ultra-high-speed operation. For the effective transfer of a huge amount of data between arithmetic and storage devices, optical communication technology represents a compelling solution. Here, by replicating a floating gate architecture with CdSe/ZnS type-I core/shell quantum dots, we demonstrate a 2D-0D hybrid optical multi-level memory device operated by laser pulses. In the device, laser pulses create linear optically trapped currents with multi-level memory characteristics, while conversely, voltage pulses reset all the trapped currents at once. Assuming electron transfer via the energy band alignment between MoS 2 and CdSe, we also establish the mechanism of the optical multi-level memory effect. Analysis of the designed device led to a new hypothesis that charge transfer is difficult for laterally adjacent quantum dots facing a double ZnS shell, which we test by separately stimulating different positions on the 2D-0D hybrid structure with finely focused laser pulses. Results indicate that each laser pulse induced independent multi-level memory characteristics in the 2D-0D hybrid architecture. Based on this phenomenon, we propose a multi-level memory inverter to produce multi-level memory effects, such as programming and erasing, solely through the use of laser pulses. Finally, the feasibility of a fully optically-controlled intelligent system based on the proposed optical multi-level memory inverters is evaluated through a CIFAR-10 pattern recognition task using a convolutional neural network. This article is protected by copyright. All rights reserved.