Giant tunneling magnetoresistance in in-plane double-barrier magnetic tunnel junctions based on MXene Cr 2 C.

The discovery of two-dimensional (2D) magnetic materials makes it possible to realize in-plane magnetic tunnel junctions. In this study, the transport characteristics of an in-plane double barrier magnetic tunnel junction (IDB-MTJ) based on Cr 2 C have been studied by density functional theory combined with the nonequilibrium Green's function method. The results showed its maximum tunneling magnetoresistance ratio (TMR) value reached 6.58 × 10 10 . Its minimum TMR value (3.86 × 10 6 ) was also comparable to those of conventional field effect transistors (FETs). Due to its giant TMR and unique structural characteristics, the IDB-MTJ based on Cr 2 C has great potential applications in magnetic random access memory (MRAM) and logic computing.