Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer.
Se Hyun KimGeun Taek YuGeun Hyeong ParkDong Hyun LeeJu Yong ParkKun YangEun Been LeeJe In LeeMin Hyuk ParkPublished in: Chemical communications (Cambridge, England) (2021)
An antiferroelectric Mo/Hf0.3Zr0.7O2/SIOx/Si capacitor was engineered using the direct scavenging effect of a sputtered Ti sacrificial layer. Charge trapping could be mitigated with the oxidized TiO2 layer, and the endurance could be enhanced beyond 109 cycles, which is higher than that of the gate stack of ferroelectric field-effect-transistors by 3-4 orders of magnitude.