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Fabrication of ring oscillators using organic molecules of phenacene and perylenedicarboximide.

Niko FioravantiLuca PierantoniDavide MencarelliClaudio TurchettiShino HamaoHideki OkamotoHidenori GotoRitsuko EguchiAkihiko FujiwaraYoshihiro Kubozono
Published in: RSC advances (2021)
Organic field-effect transistors (FETs) can be applied to radio-frequency identification tags (RFIDs) and active-matrix flat-panel displays. For RFID application, a cardinal functional block is a ring oscillator using an odd number of inverters to convert DC voltage to AC. Herein, we report the properties of two ring oscillators, one formed with [6]phenacene for a p-channel FET and N , N '-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) for an n-channel FET, and one formed with 3,10-ditetradecylpicene ((C 14 H 29 ) 2 -picene) for a p-channel FET and PTCDI-C8 for an n-channel FET. The former ring oscillator provided a maximum oscillation frequency, f osc of 26 Hz, and the latter a maximum f osc of 21 Hz. The drain-drain voltage, V DD , applied to these ring oscillators was 100 V. This may be the first step towards a future practical ring oscillator using phenacene molecules. The values of field-effect mobility, μ in the p-channel [6]phenacene FET and n-channel PTCDI-C8 FET, which form the building blocks in the ring oscillator with an f osc value of 26 Hz, are 1.19 and 1.50 × 10 -1 cm 2 V -1 s -1 , respectively, while the values in the p-channel (C 14 H 29 ) 2 -picene FET and n-channel PTCDI-C8 FET, which form the ring oscillator with an f osc of 21 Hz, are 1.85 and 1.54 × 10 -1 cm 2 V -1 s -1 , respectively. The μ values in the p-channel FETs are higher by one order of magnitude than those of the n-channel FET, which must be addressed to increase the value of f osc . Finally, we fabricated a ring oscillator with ZrO 2 instead of parylene for the gate dielectric, which provided the low-voltage operation of the ring oscillator, in which [6]phenacene and PTCDI-C8 thin-film FETs were employed. The value of f osc obtained in the ring oscillator was 24 Hz. In this ring oscillator, the V DD value applied was limited to 20 V. The durability of the ring oscillators was also investigated, and the bias stress effect on the f osc and the amplitude of the output voltage, V out are discussed. This successful operation of ring oscillators represents an important step towards the realization of future practical integrated logic gate circuits using phenacene molecules.
Keyphrases
  • heat stress