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Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.

Florian PantleFabian BeckerMax KrautSimon WörleTheresa HoffmannSabrina ArtmeierMartin Stutzmann
Published in: Nanoscale advances (2023)
[This corrects the article DOI: 10.1039/D1NA00221J.].
Keyphrases
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