Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.
Florian PantleFabian BeckerMax KrautSimon WörleTheresa HoffmannSabrina ArtmeierMartin StutzmannPublished in: Nanoscale advances (2023)
[This corrects the article DOI: 10.1039/D1NA00221J.].