High-k erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor.

In this work, high-dielectric-constant (high-k) erbium oxide（Er2O3）thin film with good dielectricity was fabricated on P-Si substrate by spin coating and annealed at a series of temperatures (from 400 ℃ to 700 ℃). The effect of annealing temperature on the microstructural and electrical properties of Er2O3 thin film was investigated by means of techniques. To demonstrate the applicability of the Er2O3 film, the indium oxide (In2O3) thin film transistor (TFT) based amorphous Er2O3 dielectric film at different temperatures was fabricated. The TFT based EO-600 showed a low-operating voltage and good electrical properties, and was connected with a resistor to construct an inverter. The results demonstrate that the Er2O3 thin film synthesized by sol-gel method could be a promising candidate for using as dielectric layer in a low-power electronic device.