Electrochemical Study of Semiconductor Properties for Bismuth Silicate-Based Photocatalysts Obtained via Hydro-/Solvothermal Approach.

Three bismuth silicate-based photocatalysts (composites of Bi 2 SiO 5 and Bi 12 SiO 20 ) prepared via the hydro-/solvothermal approach were studied using electrochemical methods. The characteristic parameters of semiconductors, such as flat band potential, donor density, and mobility of their charge carriers, were obtained and compared with the materials' photocatalytic activity. An attempt was made to study the effect of solution components on the semiconductor/liquid interface (SLI). In particular, the Mott-Schottky characterization was made in a common model electrolyte (Na 2 SO 4 ) and with the addition of glycerol as a model organic compound for photocatalysis. Thus, a medium close to those in photocatalytic experiments was simulated, at least within the limits allowed by electrochemical measurements. Zeta-potential measurements and electrochemical impedance spectroscopy were used to reveal the processes taking place at the SLI. It was found that the medium in which measurements were carried out dramatically impacted the results. The flat band potential values ( E fb ) obtained via the Mott-Schottky technique were shown to differ significantly depending on the solution used in the experiment, which is explained by different processes taking place at the SLI. A strong influence of specific adsorption of commonly used sulfate ions and neutral molecules on the measured values of E fb was shown.