Geometrically designed domain wall trap in tri-segmented nickel magnetic nanowires for spintronics devices.

"Domain wall traps" have been engineered and well-exploited in nanostrips by creating a geometrical trapping site, e.g. a single notch along a stripe, compared to diameter-modulated (DM) cylindrical magnetic nanowires (NWs) where multi-segmented DM-NWs have been generally studied. Here, we report our systematic study on the magnetization behavior, domain wall structure and its nucleation/propagation in tri-segmented diameter-modulated Ni nanowires, a simple system to investigate the magnetization reversal as function of segment geometry and lay-out order. We find out that the magnetization behavior of single Ni DM-NWs exhibits the significance of positional ordering of thick and thin segments, distinguished by two distinct geometries including: dumbbell-type (type I) and rolling pin-type (type II). Based on experimental and theoretical simulations, it was evidenced that the wide-narrow junctions create trap sites for domain walls where the narrow segment restricts their motion. This type of geometrically engineered nanowires exhibit potential efficiency for future novel spintronic devices in particular when assembled in arrays of DM-NWs as a practical three-dimensional memory device.