Developing fatigue-resistant ferroelectrics using interlayer sliding switching.

Ferroelectric materials have switchable electrical polarization that is appealing for high density non-volatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R-MoS 2 . The memory performance of this ferroelectric device does not show the "wake-up effect" at low cycles or a substantial "fatigue effect" after 10 6 switching cycles under different pulse widths. The total stress time of device under an electric field is up to 10 5 s, which is long relative to other devices. Our theoretical calculation uncovers that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.