Suppression of the plasmon-quenching effect on light amplification in 20-μm-diameter plasmonic whispering gallery mode resonators fabricated from bowl-shaped organic/metal thin films.

Bowl-shaped plasmonic whispering gallery mode (WGM) resonators were fabricated from a 10-nm-thick metal (Al, Ag, or Au) plasmonic layer that was covered with a 100-nm-thick 4,4'-bis( N -carbazolyl)-1,1'-biphenyl spacer layer and a 250-nm-thick 2,7-bis[9,9-di(4-methylphenyl)-fluoren-2-yl]-9,9-di(4-methylphenyl)fluorene light-emitting layer; the layer structure was grown on a 20-μm-diameter silica microsphere. When compared with a reference structure without the plasmonic layer, the resonators, which included either Al or Ag, showed almost the same threshold excitation intensities for generation of amplified spontaneous emission (ASE). This result indicates that the ease of light amplification in the plasmonic resonators was comparable to that in the reference structure. Excitons that exist in the vicinity of metal thin films are generally easy to quench because propagating surface plasmon polaritons (SPPs) absorb the exciton energy. Therefore, the observed comparability demonstrates that the plasmonic WGM resonators overcome this quenching effect on ASE via localization of the SPPs in the vicinity of the excitons.