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Long indium-rich InGaAs nanowires by SAG-HVPE.

Emmanuel ChereauGabin GrégoireGeoffrey AvitThierry TaliercioPhilipp StaudingerHeinz SchmidCatherine BougerolAgnès TrassoudaineEvelyne GilRay R LaPierreYamina Andre
Published in: Nanotechnology (2024)
We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μ m h -1 and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.
Keyphrases
  • electron microscopy
  • crystal structure
  • high resolution
  • room temperature
  • magnetic resonance imaging
  • mass spectrometry
  • energy transfer
  • gas chromatography
  • oxide nanoparticles