High-Performance Resistive Random Access Memories Based on Two-Dimensional HAPbI 4 Organic-Inorganic Hybrid Perovskite.

Organic-inorganic hybrid perovskites have attracted extensive attention for potential memory applications because of their excellent properties, such as high charge carrier mobility and fast ion migration. Herein, the two-dimensional HAPbI 4 perovskite with an octahedral structure and high stability was prepared by a facile solution method. Moreover, the resistive random access memory (RRAM) with the Ag/PMMA/HAPbI 4 /ITO structure has been successfully fabricated by spin coating and vacuum thermal evaporation. The as-prepared RRAM device based on HAPbI 4 demonstrated superior resistive switching performance. The on/off ratio is as high as 10 5 , and the corresponding retention of the device exceeds 10 000 s; furthermore, the RRAM device could be kept stable after being kept in the air for 24 weeks.