Controlling the optical and magnetic properties of CdTeSe and Gd-doped CdTeSe alloy semiconductor nanocrystals.

In this study, CdTe x Se 1- x (0 ≤ x ≤ 1) and CdTeSe:Gd y % ( y = 0-8.05) alloy semiconductor nanocrystals (NCs) were prepared by wet chemical method. The presence and composition of the elements in the sample were determined by energy dispersive X-ray (EDX) spectroscopy and X-ray photoelectron spectroscopy (XPS). Structural analysis of X-ray diffraction (XRD) patterns indicated that most NCs crystallized in the zinc blende (ZB) structure however some Gd-doped NCs ( y = 4.52 and 8.05%) crystallized in the wurtzite (WZ) structure. The emission peak of CdTe x Se 1- x (0 ≤ x ≤ 1) NCs varied over a wide range when changing x while the particle size remained almost unchanged. The effect of Gd doping on the structure and optical and magnetic properties of CdTeSe NCs was studied in detail. When the Gd concentration increases from 0-8.05%: (i) the structure of CdTeSe NCs gradually changed from ZB to WZ, (ii) the emission efficiency of the material was significantly reduced, (iii) the PL lifetime of samples increased more than 10 times, and (iv) the ferromagnetic properties of the material were enhanced. The research findings demonstrated that it is possible to control the crystal structure, optical characteristics, and magnetic properties of Gd-doped CdTeSe nanocrystals by adjusting the dopant concentration and chemical composition of the host material.