Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions.
Ji-Hoon KangHeechang ShinKi Seok KimMin-Kyu SongDoyoon LeeYuan MengChanyeol ChoiJun Min SuhBeom Jin KimHyunseok KimAnh Tuan HoangBo-In ParkGuanyu ZhouSuresh SundaramPhuong VuongJiho ShinJinyeong ChoeZhihao XuRehan YounasJustin S KimSangmoon HanSangho LeeSun Ok KimBeomseok KangSeungju SeoHyojung AhnSeunghwan SeoKate ReidyEugene ParkSungchul MunMin-Chul ParkSuyoun LeeHyung-Jun KimHyun S KumPeng LinChristopher L HinkleAbdallah OugazzadenJong-Hyun AhnJeehwan KimSang-Hoon BaePublished in: Nature materials (2023)
Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality. A total of six layers of transistor and memristor arrays were vertically integrated into a 3D nanosystem to perform AI tasks, by peeling and stacking of AI processing layers made from bottom-up synthesized two-dimensional materials. This fully monolithic-3D-integrated AI system substantially reduces processing time, voltage drops, latency and footprint due to its densely packed AI processing layers with dense interlayer connectivity. The successful demonstration of this monolithic-3D-integrated AI system will not only provide a material-level solution for hetero-integration of electronics, but also pave the way for unprecedented multifunctional computing hardware with ultimate parallelism.