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Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials.

Yung-Chang LinHyun Goo JiLi-Jen ChangYao-Pang ChangZheng LiuGun-Do LeePo-Wen ChiuHiroki KinoshitaKazu Suenaga
Published in: ACS nano (2020)
Scanning moiré fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.
Keyphrases
  • high resolution
  • electron microscopy
  • single molecule
  • deep learning
  • optical coherence tomography
  • high throughput
  • living cells