Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects.

The development of powerful terahertz (THz) emitters is the cornerstone for future THz applications, such as communication, medical biology, non-destructive inspection, and scientific research. Here, we report the THz emission properties and mechanisms of mushroom-shaped InAs nanowire (NW) network using linearly polarized laser excitation. By investigating the dependence of THz signal to the incidence pump light properties (e.g. incident angle, direction, fluence, and polarization angle), we conclude that the THz wave emission from the InAs NW network is induced by the combination of linear and nonlinear optical effects. The former is a transient photocurrent accelerated by the photo-Dember field, while the latter is related to the resonant optical rectification effect. Moreover, thep-polarized THz wave emission component is governed by the linear optical effect with a proportion of ∼85% and the nonlinear optical effect of ∼15%. In comparison, thes-polarized THz wave emission component is mainly decided by the nonlinear optical effect. The THz emission is speculated to be enhanced by the localized surface plasmon resonance absorption of the In droplets on top of the NWs. This work verifies the nonlinear optical mechanism in the THz generation of semiconductor NWs and provides an enlightening reference for the structural design of powerful and flexible THz surface and interface emitters in transmission geometry.