Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electronic band gap. Though much research has been conducted to learn about the electrical properties of the IBL, not nearly as much work has been reported on the optical properties of the IBL. In this work, we combine measurements from Mueller matrix ellipsometry, differential reflectance contrast, atomic force microscopy, and Raman spectroscopy, as well as calculations from Kramers-Kronig analyses and density functional theory (DFT), to determine the dielectric function of the IBL within the energy range of 1 eV to 8.5 eV.
Keyphrases
- density functional theory
- atomic force microscopy
- raman spectroscopy
- single molecule
- molecular dynamics
- molecular dynamics simulations
- high speed
- room temperature
- ionic liquid
- high resolution
- magnetic resonance
- solid state
- electron transfer
- magnetic resonance imaging
- perovskite solar cells
- walled carbon nanotubes
- computed tomography
- crystal structure