Demonstration of the threshold-switching memory devices using EMIm(AlCl 3 )Cl and ZnO for neuromorphic applications.

The threshold-switching behaviors of the synapses lead to energy-efficient operation in the neural computing system. Here, we demonstrated the threshold-switching memory devices by inserting the ZnO layer into the ionic synaptic devices. The EMIm(AlCl 3 )Cl is utilized as the electrolyte because its conductance can be tuned by the charge states of the Al-based ions. The redox reactions of the Al ions in the electrolyte can lead to the analog resistive switching characteristics, such as excitatory postsynaptic current, paired-pulse facilitation, potentiation, and depression. By inserting the ZnO layer into the EMIm(AlCl 3 )-based ionic synaptic devices, the threshold switching behaviors are demonstrated. Using the resistivity difference between ZnO and EMIm(AlCl 3 )Cl, the analog resistive switching behaviors are tunned as the threshold-switching behaviors. The threshold-switching behaviors are achieved by applying the spike stimuli to the device. Demonstration of the threshold-switching behaviors of the ionic synaptic devices has a possibility to achieve high energy-efficiency for the ion-based artificial synapses.