Davydov Splitting, Resonance Effect and Phonon Dynamics in Chemical Vapor Deposition Grown Layered MoS2.

We present comprehensive temperature dependent Raman measurements for chemical vapor deposition grown horizontally aligned layered MoS2in a temperature range of 4-330 K under a resonance condition. Our analysis of temperature dependent phonon frequency shift and linewidth suggests a finite role of three and four phonon anharmonic effect. We observe Davydov splitting of the out-of-plane (A1g) and in-plane (E2g1) modes for both three layer (3L) and few layer (FL) systems. The number of Davydov splitting components are found more in FL compared to 3L MoS2, which suggests that it increases with an increasing number of layers. Further, Davydov splitting is analyzed as a function of temperature. Temperature evaluation of the Raman spectra shows that the Davydov splitting, especially forA1gmode, is very strong and well resolved at low temperature. We observe thatA1gmode shows the splitting at low temperature, whileE2g1mode is split even at room temperature, which suggests a prominent role ofA1gmode in the interlayer interaction at low temperature. Further, an almost 60-fold increase in the intensity of the phonon modes at low temperature clearly shows the temperature dependent tuning of the resonance effect.