High-Performance and Low-Power p -Channel Transistors Based on Monolayer Be 2 C.

The advantages of 2D materials in alleviating the issues of short-channel effect and power dissipation in field-effect transistors (FETs) are well recognized. However, the progress of complementary integrated circuits has been stymied by the absence of high-performance (HP) and low-power (LP) p -channel transistors. Therefore, we conducted an investigation into the electronic and ballistic transport characteristics of monolayer Be 2 C, which features quasi-planar hexacoordinate carbons, by employing nonequilibrium Green's function combined with density functional theory. Be 2 C monolayer has planar anticonventional bonds and a direct bandgap of 1.53 eV. The I on of p -type Be 2 C HP FETs can achieve a remarkable 2767 μA μm -1 . All of the device properties of 2D Be 2 C FETs can exceed the demands of the International Roadmap for Devices and Systems. The excellent properties of Be 2 C as a 2D p -orbital material with a high hole mobility are discussed from different aspects. Our findings thus illustrate the tremendous potential of 2D Be 2 C for the next generation of HP and LP electronics applications.