Login / Signup

Interlayer epitaxy of wafer-scale high-quality uniform AB-stacked bilayer graphene films on liquid Pt3Si/solid Pt.

Wei MaMao-Lin ChenLichang YinZhibo LiuHui LiChuan XuXing XinDong-Ming SunHui-Ming ChengWen-Cai Ren
Published in: Nature communications (2019)
Large-area high-quality AB-stacked bilayer graphene films are highly desired for the applications in electronics, photonics and spintronics. However, the existing growth methods can only produce discontinuous bilayer graphene with variable stacking orders because of the non-uniform surface and strong potential field of the solid substrates used. Here we report the growth of wafer-scale continuous uniform AB-stacked bilayer graphene films on a liquid Pt3Si/solid Pt substrate by chemical vapor deposition. The films show quality, mechanical and electrical properties comparable to the mechanically exfoliated samples. Growth mechanism studies show that the second layer is grown underneath the first layer by precipitation of carbon atoms from the solid Pt, and the small energy requirements for the movements of graphene nucleus on the liquid Pt3Si enables the interlayer epitaxy to form energy-favorable AB stacking. This interlayer epitaxy also allows the growth of ABA-stacked trilayer graphene and is applicable to other liquid/solid substrates.
Keyphrases
  • room temperature
  • ionic liquid
  • carbon nanotubes
  • walled carbon nanotubes
  • transcription factor
  • solar cells
  • risk assessment
  • quality improvement