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Pulsed-Mode Metalorganic Vapor-Phase Epitaxy of GaN on Graphene-Coated c -Sapphire for Freestanding GaN Thin Films.

Seokje LeeMuhammad Sabbtain AbbasDongha YooKeundong LeeTobiloba G FabunmiEunsu LeeHan Ik KimImhwan KimDaniel JangSangmin LeeJusang LeeKi-Tae ParkChanggu LeeMiyoung KimYun Seog LeeCelesta S ChangGyu-Chul Yi
Published in: Nano letters (2023)
We report the growth of high-quality GaN epitaxial thin films on graphene-coated c -sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off by using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films. These films, exhibiting excellent single crystallinity, were utilized to fabricate transferable GaN LEDs by heteroepitaxially growing In x Ga 1- x N/GaN multiple quantum wells and a p -GaN layer on the GaN films, showing their potential application in advanced optoelectronic devices.
Keyphrases
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