Login / Signup

Polar Bloch points in strained ferroelectric films.

Yu-Jia WangYan-Peng FengYun-Long TangYin-Lian ZhuYi CaoMin-Jie ZouWan-Rong GengXiu-Liang Ma
Published in: Nature communications (2024)
Topological domain structures have drawn great attention as they have potential applications in future electronic devices. As an important concept linking the quantum and classical magnetism, a magnetic Bloch point, predicted in 1960s but not observed directly so far, is a singular point around which magnetization vectors orient to nearly all directions. Here we show polar Bloch points in tensile-strained ultrathin ferroelectric PbTiO 3 films, which are alternatively visualized by phase-field simulations and aberration-corrected scanning transmission electron microscopic imaging. The phase-field simulations indicate local steady-state negative capacitance around the Bloch points. The observation of polar Bloch points and their emergent properties consequently implies novel applications in future integrated circuits and low power electronic devices.
Keyphrases
  • high resolution
  • molecular dynamics
  • current status
  • room temperature
  • monte carlo
  • working memory
  • risk assessment
  • climate change
  • carbon nanotubes
  • molecularly imprinted