Login / Signup

An Operation Guide of Si-MOS Quantum Dots for Spin Qubits.

Rui-Zi HuRong-Long MaMing NiXin ZhangYuan ZhouKe WangGang LuoGang CaoZhen-Zhen KongGui-Lei WangHai-Ou LiGuo-Ping Guo
Published in: Nanomaterials (Basel, Switzerland) (2021)
In the last 20 years, silicon quantum dots have received considerable attention from academic and industrial communities for research on readout, manipulation, storage, near-neighbor and long-range coupling of spin qubits. In this paper, we introduce how to realize a single spin qubit from Si-MOS quantum dots. First, we introduce the structure of a typical Si-MOS quantum dot and the experimental setup. Then, we show the basic properties of the quantum dot, including charge stability diagram, orbital state, valley state, lever arm, electron temperature, tunneling rate and spin lifetime. After that, we introduce the two most commonly used methods for spin-to-charge conversion, i.e., Elzerman readout and Pauli spin blockade readout. Finally, we discuss the details of how to find the resonance frequency of spin qubits and show the result of coherent manipulation, i.e., Rabi oscillation. The above processes constitute an operation guide for helping the followers enter the field of spin qubits in Si-MOS quantum dots.
Keyphrases
  • room temperature
  • quantum dots
  • ionic liquid
  • transition metal
  • density functional theory
  • sensitive detection
  • energy transfer
  • single molecule
  • high frequency
  • risk assessment
  • gold nanoparticles
  • electron microscopy