Mechanically Robust Interface at Metal/Muscovite Quasi van der Waals Epitaxy.
Jia-Wei ChenYun-Guan WeiHung-Yang LoSiCheng LuYi-Che ChenChi-Fong LeiPo-Liang LiuPu YuNien-Ti TsouAkira YasuharaWen-Wei WuYing-Hao ChuPublished in: ACS applied materials & interfaces (2023)
Quasi van der Waals epitaxy is an approach to constructing the combination of 2D and 3D materials. Here, we quantify and discuss the 2D/3D interface structure and the corresponding features in metal/muscovite systems. High-resolution scanning transmission electron microscopy reveals the atomic arrangement at the interface. The theoretical results explain the formation mechanism and predict the mechanical robustness of these metal/muscovite quasi van der Waals epitaxies. The evidence of superior interface quality is delivered according to the outstanding performance of the designed systems in both retention (>10 5 s) and cycling tests (>10 5 cycles) through electromechanical measurements. With high-temperature X-ray reciprocal space mapping, the unique anisotropy of thermal expansion is discovered and predicted to sustain the thermal stress with a sizable thermal actuation. A maximum bending curvature of 264 m -1 at 243 °C can be obtained in the silver/muscovite heteroepitaxy. The electrothermal and photothermal methods show a fast response to thermal stress and demonstrate the interface robustness.