DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride.
Feifei ZhouZhengzhi JiangHaidong LiangShihao RuAndrew A BettiolWei-Bo GaoPublished in: Nano letters (2023)
Spin defects existing in van der Waals materials attract wide attention thanks to their natural advantages for in situ quantum sensing, especially the negatively charged boron vacancy (V B - ) centers in hexagonal boron nitride ( h -BN). Here we systematically investigate the laser and microwave power broadening in continuous-wave optically detected magnetic resonance (ODMR) of the V B - ensemble in h -BN, by revealing the behaviors of ODMR contrast and line width as a function of the laser and microwave powers. The experimental results are well explained by employing a two-level simplified model of ODMR dynamics. Furthermore, with optimized power, the DC magnetic field sensitivity of V B - ensemble is significantly improved up to 2.87 ± ± 0.07 μT/ H z . Our results provide important suggestions for further applications of V B - centers in quantum information processing and ODMR-based quantum sensing.
Keyphrases
- magnetic resonance
- molecular dynamics
- density functional theory
- quantum dots
- dendritic cells
- room temperature
- energy transfer
- single molecule
- contrast enhanced
- convolutional neural network
- monte carlo
- working memory
- reduced graphene oxide
- high speed
- transition metal
- computed tomography
- social media
- health information