Low-temperature characteristics of magnesium fluoride based bipolar RRAM devices.

This study investigates the temperature-independent switching characteristics of magnesium fluoride (MgF x ) based bipolar resistive memory devices at temperatures ranging from 300 K down to 77 K. Filament type resistive switching at the interface of Ti/MgF x and the trap-controlled space charge limited conduction (SCLC) mechanism in the bulk MgF x layer are confirmed. The experimental results indicate that the operating environment and temperature critically control the resistive switching performance by varying the non-stoichiometry of the amorphous MgF x active layer and Ti/MgF x interface region. The gaseous atmosphere (open air or vacuum) affects device performances such as the electroforming process, on-state current, off-state current, on/off ratio, SET/RESET voltage and endurance of resistive-switching memory devices. After electroforming, the device performance is independent of temperature variation. The Ti/MgF x /Pt memory devices show promising data retention for >10 4 s in a vacuum at room temperature and 77 K with the DC endurance property for more than 150 cycles at 77 K. The devices have great potential for future temperature-independent electronic applications.